Studying steady state one-dimensional p-n junction using finite element method

Abstract

We have implemented a computer program that solved semiconductor device equations using the finite element method. A set of three coupled equations, (i) Poissonûs equation, (ii) electron continuity equation, and (iii) hole continuity equation were solved iteratively using Gummelûs method. The numerical method used was based on the Galerkin finite element scheme. Upon finding the solutions, the algorithm provided us with important information relevant to semiconductor devices such as electric field, potential, and carrier concentration within the device. In addition, I-V characteristic for the semiconductor device could be calculated. We simulated a representative case: p-n junction diode. The results were in good agreement with previously published studies by De Mari.