Properties of aluminum oxynitride (AION) thin film grown by reactive RF magnetron sputtering

Abstract

In this study, Aluminum Oxynitride thin films were grown on semiconductor (100) Si-substrates
using the reactive RF magnetron sputtering technique with gas timing [Ar(sec):N2(sec)] 10:90. Surface
profiler, scanning electron microscope and Auger electron spectroscope were used to determine the thickness
and compositional depth profile. the films were then annealed in air at various temperatures. The morphological
features of the annealed films were studied via scanning electron microscopy.